Ga-assisted MBE grown GaAs nanowires and related quantum heterostructures

by Prof. Anna Fontcuberta i Morral (Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, Switzerland - Walter Schottky Institut, Technische Universität München, Germany)

Monday 21 Sept 2009, 16:00 → 17:00 Europe/Rome

Aula 5 (Dipartimento di Fisica - Ed. E. Fermi)

Nanowires represent model systems for studying a variety of low dimensional phenomena as well as building blocks for the future generation of nanoscale devices. The most exploited nanowire growth technique is the vapor-liquid-solid (VLS) method, which employs gold as a seed for the growth. Synthesis of nanowires by molecular beam epitaxy (MBE) and without using gold as a catalyst gives the opportunity to study nanowires produced in extremely clean conditions and correlate it with optical and electronic properties. We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. We present the possibilities this method has to offer in terms of types of structures and devices possible. The growth mechanisms, structural and optical properties will be shown in detail.