17-19 October 2018
Laboratori Nazionali di Frascati INFN
Europe/Rome timezone

Silicon Drift Detectors and low-noise readout ASICs for X-ray Spectroscopy

Not scheduled
30m
Aula Salvini (Laboratori Nazionali di Frascati INFN)

Aula Salvini

Laboratori Nazionali di Frascati INFN

Via E. Fermi 40 00044 Frascati (RM)

Speaker

Aidin Amirkhani (MI)

Description

This work reports about the development of Silicon Drift Detector (SDDs) arrays and readout electronics for the upgrade of the INFN- SIDDHARTA experiment. The SIDDHARTA experiment uses high resolution X-ray spectroscopy of kaonic atoms to determine the transition yields and the strong interaction induced shift and width of the lowest experimentally accessible level. A new detection system based on 200cm2 SDDs will be installed within 2018 to run kaonic-deuterium measurements in 2019. The detector is a Silicon Drift Detector (SDDs) array composed by 8 independent elements, square shaped with 64 mm2 (8×8) area each. The detector is organized in a 4×2 format for a total area of 34×18 mm2. The upgrade of the SIDDHARTA experiment requires 48 detector arrays that are designed and manufactured by the Fondazione Bruno Kessler (FBK). The readout electronics is composed by CUBE (a low-noise CMOS preamplifier), individually connected to each SDD, and by SFERA (SDDs Front-End Readout ASIC), a 16 channels ASIC that perform analog shaping of the signals. SFERA is designed in a 0.35 µm technology and the main elements of the single channel are a high order shaping amplifier (9th order Semi-Gaussian complex poles), a fast shaper amplifier, a peak detector, a baseline holder and a high efficiency pile-up rejection logic. The shaping amplifier is characterized by selectable gain and peaking times that can be selected with different configurations of an internal 256-bit register. The available gain settings are (corresponding energy of the shaper full scale): 10 keV, 16 keV, 36 keV, 50 keV and 20000 e-. This last setting is useful when SFERA chip is used to read an SDD array coupled to a scintillator crystal in gamma-ray applications. The main shaper has peaking times of 500 ns, 1 µs, 2 µs, 3 µs, 4 µs and 6 µs (selectable) while the fast shaper has a fixed one of 200 ns. The outputs of the channels are connected to an analog multiplexer that can be connected to an external ADC card or to a 12-bit SAR on-chip ADC. Measurements of the detectors arrays will be reported (coupled to the SFERA chip) in this work. Moreover, a study the effect of charge sharing on SDD channels upon absorption of X-rays and background particles on SDD is discussed. This study aims at investigating the performances of such devices when expected to be irradiated with X-rays signals and with a large background due to MIPs of the accelerator.

Primary author

Presentation Materials

There are no materials yet.