Silicon Carbide: from materials properties to applications
by
Camarda Massimo(PSI)
→
Europe/Rome
Aula 52 (LNS)
Aula 52
LNS
Description
Silicon Carbide, having material properties between Silicon and Diamond, has the potentials to substitute both semiconductors in many applications: X-ray detectors and high-power devices, as alternative to Silicon, beam positions monitors and quantum applications, as alternative to Diamond.
After a short introduction to the Paul Scherrer Institute and ETH University, I will present the different on-going research activities, focusing on the results we have recently obtained in terms of X-ray radiation hardness and device dynamics for Silicon Carbide beam positions monitors and strip detectors.
