How to study quantum physics with Silicon nano-structures

by Giuseppe Carlo Tettamanzi (School of Physics and CQC2T, The University of New South Wales, Sydney, Australia)

Monday 19 Sept 2016, 12:00 → 13:30 Europe/Rome

Aula Careri (Dipartimento di Fisica - ed. G.Marconi)

On-demand transfer of single electrons via semiconductor nano-structures has been recently developed to enable a quantum realisation of the unit ampere. At present, the best certified accuracy of the charge transfer has been achieved with GaAs quantum dot (QD)-based pumps. However, in order to optimally operate these devices demanding experimental conditions are required. In this context, Si implementations promise to significantly simplify these requirements in light of the mature single dopant and other metal-oxide-semiconductor (MOS) technologies by offering good control of the electrostatic confinement. I will discuss some of our recent results, will introduce a new model used to describe the behaviours observed in our single dopant devices and show how we have achieved some very high frequency of pumping operation in Si QDs.