25–30 Sept 2016
Europe/Rome timezone
deadline for abstracts has expired

Measurementes of the high-efficiency deflection of 400 GeV/c protons due to channeling along the <110> axis of a bent silicon crystal

29 Sept 2016, 18:40
1h

Speaker

Enrico Bagli (FE)

Description

Bent silicon crystals have been measured to deflect 400 GeV/c protons thanks to channeling along the <110> axis with a 61 % efficiency. This is found to be comparable with the deflection efficiency due to planar channeling and considerably larger than in the case of the <111> axis . Besides, the probabilities of inelastic nuclear interactions of protons crossing the crystal are measured in channeling conditions relatively to a crystal random orientation and found to be 10 % for the channeling along the <110> axis and 25 % for channeling within the (110) planes. High efficiency deflection and relatively small losses due to inelastic interactions make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

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