A neutron transmutation doped highly segment double-sided silicon strip Detector has been characterized using mono-energetic pulsed beams of protons (1 and 3 MeV). This work shows the interestrip effect caused by the beam impinging on: (i) the middle area of a strip and (ii) on an area coverting two adjacent strips and their interstrip gap. The pre-amplified output waveforms of the strips on both detector sides have been digitized at 100 MS/s. Charge sharing, induced signal and charge loss have been investigated for different incident positions between adjacent strips, for beam entering from the junction side and the ohmic side, and as a function of the depletion voltage.
