Relatore
Dr.
Andrey Solov'yov
(Physics Department, Goethe University, Max-von-Laue Str. 1, D-60438 Frankfurt am Main)
Descrizione
We report results of simulation of axial and planar channeling of electrons, positrons and muons in straight [1] and periodically [2, 3] bent Si crystals. The simulations of trajectories of channelled projectiles with accounting for the all-atom interactions have been performed by solution of the classical relativistic equations of motion using newly developed module of the universal MBN Explorer software package [4].
The efficient algorithms of particle trajectories simulation implemented in MBN Explorer has allowed us to describe planar and axial channeling and radiation processes for different type of charged particles and crystals (of different kind and shape) occurring at different energies. In these simulations we have analysed the particle dechanneling lengths, spectral and angular distributions of radiation emitted in the straight, bent and periodically bent crystals. These simulations elucidate all the elementary events of particle propagation through the crystal that contribute to the overall beam propagation and radiation effects.
The calculation of the spectra as well as the numerical analysis of channeling conditions and properties (acceptance, dechanneling length, etc) have been carried out for different beam energies in the rage between 855 MeV and 10 GeV. The obtained results are in a good agreement with the results of the performed experiments and provide predictions for the experiments on electron and positron channeling ongoing at SLAC [5].
References
1. G. B. Sushko, V. G. Bezchastnov, I. A. Solov’yov, A. V. Korol, W. Greiner, A. V. Solovyov, Simulation of ultra-relativistic electrons and positrons channeling in crystals with MBN Explorer, Journal of Computational Physics 252 (2013) 404-418.
2. G. Sushko, A. Korol, W. Greiner, A. Solov'yov, Sub-GeV electron and positron channeling in straight, bent and periodically bent silicon crystals, Journal of Physics: Conference Series 438 (2013) 012018.
3. G. Sushko, V. Bezchastnov, A. Korol, W. Greiner, A. Solov'yov, R. Polozkov, V. Ivanov, Simulations of electron channeling in bent silicon crystal, Journal of Physics: Conference Series 438 (2013) 012019
4. Solov’yov I A, Yakubovich A V, Nikolaev P V, Volkovets I and Solov’yov A V, J. Comp. Chem. 33, 2412 (2012); http://www.mbnexplorer.com/
5. U. Wienands, T. Markiewicz, J. Nelson, R. Noble, J. Turner, U. Uggerhøj, T. Wistisen, E. Bagli, L. Bandiera, G. Germogli, et al., Observation of a remarkable deflection of multi-gev electron beams by a thin crystal, SLAC Scientific Publications (2014)
Autore principale
Dr.
Andrey Solov'yov
(Physics Department, Goethe University, Max-von-Laue Str. 1, D-60438 Frankfurt am Main)
Coautore
Dr.
Andrey Korol
(Physics Department, Goethe University, Max-von-Laue Str. 1, D-60438 Frankfurt am Main)
Sig.
Gennady Sushko
(Physics Department, Goethe University, Max-von-Laue Str. 1, D-60438 Frankfurt am Main)
Dr.
Victor Beschastnov
(MBN Research Center, Altenhöferallee 3, D-60438 Frankfurt am Main)
