Speaker
Description
Thin 20 µm n-type silicon was obtained using of selective dissolution n$^+$ - n structures. Obtained thin epitaxial silicon wafers were cut by laser into 21.3 mm X 21.3 mm squares. The thin silicon squares were collimated by 20 mm X 20 mm Al foil windows followed B$^+$ implantation with dose $5\cdot 10^{14}$ ions/cm$^2$ and energy about 50 keV. After that Al contacts were evaporated on both sides of the wafers. The technological process was finished by long time baking with temperature 160 °C. Thin detectors are glued by conductive glue into FAZIA quartetto frames. Contacts between detectors and the track on thin flexible pcb ribbons were performed using thin Cu wires by ultrasonic welding. The E-ΔE spectra of α-particles with energies 6.1 MeV and 8.75 MeV from Th source will be presented.