Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering

21 Jun 2019, 12:35
20m
Ferrara, Italy

Ferrara, Italy

Speaker

Dr Lionel Presmanes (CIRIMAT, Université de Toulouse)

Description

In this work Ga doped ZnO thin films have been deposited by RF magnetron sputtering onto a silicon micro-hotplate and their structural, microstructural and gas sensing properties have been studied. ZnO:Ga thin film with a thickness of 90 nm has been deposited onto a silicon based micro-hotplates without any photolithography process thanks to a low cost and reliable stencil mask process. Sub-ppm sensing (500 ppb) of NO2 gas at low temperature (50 °C) has been obtained with promising responses R/R0 up to 18.

Primary author

Dr Lionel Presmanes (CIRIMAT, Université de Toulouse)

Co-authors

Dr V. Gunasekaran (CIRIMAT, Université de Toulouse) Dr Y. Thimont (CIRIMAT, Université de Toulouse) Dr I. Sinnarasa (CIRIMAT, Université de Toulouse) Dr A. Sinnarasa (CIRIMAT, Université de Toulouse) Dr Ph. Tailhades (CIRIMAT, Université de Toulouse) Dr F. Blanc (CIRIMAT, Université de Toulouse) Dr C. Talhi (LAAS-CNRS, Université de Toulouse) Dr Ph. Menini (LAAS-CNRS, Université de Toulouse)

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