28th RD50 Workshop (Torino)

Session

Sensors with Internal Gain I

7 Jun 2016, 11:00

Aula Magna della Cavallerizza Reale (Torino)

Conveners

Sensors with Internal Gain I

• giulio Pellegrini (Centro Nacional Microelectronica IMB-CNM-CSIC)

42. High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

Mr Marcos Fernandez Garcia (IFCA-Santander)

07/06/2016, 11:00

23. Silicon sensors with internal gain: Optimizing for charged particle fast timing

Dr Michael Moll (CERN)

07/06/2016, 11:20

Internal Gain in Si timing sensors is needed to overcome the ~100 picosecond lower limit encountered by NA62 GTK and the CMS HGCal projects. We focus on 2 techniques, currently available for achieving internal gain- 1) “reachthrough” in which a high field region is limited to a superficial few micron thick layer and 2) “deep-depleted AD’s where it is deep and the distribution between “drift”...

1. Progress in Ultra-Fast Silicon Detectors

Hartmut Sadrozinski (SCIPP UC Santa Cruz)

07/06/2016, 11:40

We report on the status of the development of Ultra-Fast Silicon Detectors (UFSD). UFSD are novel silicon sensors based on the Low-Gain Avalanche Diodes (LGAD) design and, due to internal gain, exhibit a signal which is a factor of ~ 10 larger than standard silicon detectors. The internal gain allows obtaining fast and large signals, a pre-requisite for time applications, and thus they are...

19. Technological Developments on iLGAD Detectors for Tracking and Timing Applications

Ms Maria del Mar Carulla Areste (PhD Student at Instituto de Microelectrónica de Barcelona-CNM-CSIC)

07/06/2016, 12:00

This presentation introduces the latest technological development on the Inverse Low Gain Avalanche Detector iLGAD as well as the first characterization results. This structure is based on the standard Avalanche Photo Diodes (APD) concept that includes an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the...

39. Performance of thin LGADs after irradiation

Dr Gregor Kramberger (Jozef Stefan Institute)

07/06/2016, 12:20